A 400GHz fMAX Fully Self-Aligned SiGe:C HBT Architecture

机译：400GHz fMAX完全自对准SiGe：C HBT架构

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摘要

An improved fully self-aligned SiGe:C HBT architecture featuring a single-step epitaxial collector-base process is described. An fMAX value of 400 GHz is reached by structural as well as intrinsic advancements made to the HBT device.

机译：描述了一种改进的完全自对准SiGe：C HBT架构，该架构具有单步外延集电极基工艺。 HBT设备的结构以及内在的改进使fMAX值达到400 GHz。

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作者
Van Huylenbroeck, Stefaan; Sibaja-Hernandez, Arturo; Venegas, Rafael; You, Suzhen; Winderickx, Gillis; Radisic, Dunja; Lee, Willie; Ong, Patrick; Vandeweyer, Tom; Nguyen, Ngoc Duy; De Meyer, Kristin; Decoutere, Stefan;
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年度 2009
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正文语种 en
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专利

1. Reliable Technology Evaluation of SiGe HBTs and MOSFETs: fMAX Estimation From Measured Data [J] . Saha Bishwadeep, Fregonese Sebastien, Heinemann Bernd, IEEE Electron Device Letters . 2021,第1期

机译：SiGe HBT和MOSFET的可靠技术评估：测量数据的FMAX估计
2. Optimization of external poly base sheet resistance in 0.13 μm quasi self-aligned SiGe:C HBTs [J] . S. You, S. Van Huylenbroeck, N.D. Nguyen, Thin Solid Films . 2010,第suppla1期

机译：在0.13μm准自对准SiGe：C HBT中优化外部多晶硅基片电阻
3. Impact of inside spacer process on fully self-aligned 250 GHz SiGe:C HBTs reliability performances: a-Si vs. nitride [J] . M. Diop, N. Revil, M. Marin, Microelectronics reliability . 2008,第8a9期

机译：内部隔离层工艺对完全自对准的250 GHz SiGe：C HBT可靠性性能的影响：a-Si与氮化物
4. A 400GHz f_(MAX) Fully Self-Aligned SiGe:C HBT Architecture [C] . S. Van Huylenbroeck, A. Sibaja-Hernandez, R. Venegas, IEEE Bipolar/BioCMOS Circuits and Technology Meeting . 2009

机译：A 400GHz F_（MAX）完全自对准SiGe：C HBT架构
5. Power-Derived Thermal Characterization of SiGe HBTs and Design of Timing Circuit using a Phase Locked-Loop. [D] . Shah, Valay Dineshbhai. 2016

机译：SiGe HBT的功率衍生热表征和使用锁相环的定时电路设计。
6. STEM nanoanalysis of Au/Pt/Ti-Si3N4 interfacial defects and reactions during local stress of SiGe HBTs [O] . Ali Alaeddine, Cécile Genevois, Laurence Chevalier, 2011

机译：SiGe HBT局部应力过程中Au / Pt / Ti-Si3N4界面缺陷和反应的STEM纳米分析
7. Optimization of external poly base sheet resistance in 0.13 µm quasi self-aligned SiGe:C HBTs [O] . You, Suzhen, Van Huylenbroeck, Stefaan, Nguyen, Ngoc Duy, 2009

机译：在0.13 µm准自对准SiGe：C HBT中优化外部多晶硅基片电阻
8. Power SiGe Heterojunction Bipolar Transistors (HBTs) Fabricated by Fully Self-Aligned Double Mesa Technology [R] . Lu, Liang-Hung, Mohammadi, Saeed, Ma, Zhen-Qiang, 2001

机译：功率siGe异质结双极晶体管（HBT）采用全自对准双mesa技术制造

A 400GHz fMAX Fully Self-Aligned SiGe:C HBT Architecture

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